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Simplified 1-D calculation of 13.5-nm emission in a tin plasma including radiation transport
Date Issued
2009-12-04
Date Available
2011-01-14T17:18:42Z
Abstract
Many next generation lithography schemes for the semiconductor industry are based on a 13.5-nm tin plasma light source, where hundreds of thousands of 4d-4f, 4p-4d, and 4d-5p transitions from Sn5+–Sn13+ ions overlap to form an unresolved transition array. To aid computation, transition arrays are treated statistically, and Hartree-Fock results are used to calculate radiation transport in the optically thick regime with a 1-D Lagrangian plasma hydrodynamics code. Time-dependent spectra and conversion efficiencies of 2% in-band 13.5-nm emission to laser energy are predicted for a Nd:YAG laser incident on a pure tin slab target as a function of laser power density and pulse duration at normal incidence. Calculated results showed a maximum conversion efficiency of 2.3% for a 10-ns pulse duration at 8.0 x 1010 W/cm2 and are compared to experimental data where available. Evidence for the need to include lateral expansion is presented.
Sponsorship
Science Foundation Ireland
Type of Material
Journal Article
Publisher
American Institute of Physics
Journal
Journal of Applied Physics
Volume
106
Issue
11
Start Page
113303-1
End Page
113303-8
Copyright (Published Version)
2009 American Institute of Physics
Subject – LCSH
Hartree-Fock approximation
Laser plasmas
Semiconductor industry--Laser use in
Extreme ultraviolet lithography
Web versions
Language
English
Status of Item
Peer reviewed
This item is made available under a Creative Commons License
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2009JournalofAppliedPhysicsWhiteetalUCDRepositoryDraft.pdf
Size
377.36 KB
Format
Owning collection
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