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Scanning frequency mixing microscopy of high-frequency transport behavior at electroactive interfaces
Date Issued
2006-04
Date Available
2014-01-31T10:06:54Z
Abstract
An approach for high-frequency transport imaging, referred to as scanning frequency mixing microscopy (SFMM), is developed. Application of two high-frequency bias signals across an electroactive interface results in a low-frequency component due to interface nonlinearity. The frequency of a mixed signal is chosen within the bandwidth of the optical detector and can be tuned to the cantilever resonances. The SFMM signal is comprised of an intrinsic device contribution and a capacitive mixing contribution, and an approach to distinguish the two is suggested. This technique is illustrated on a model metal-semiconductor interface. The imaging mechanism and surface-tip contrast transfer are discussed. SFMM allows scanning probe microscopy based transport measurements to be extended to higher, ultimately gigahertz, frequency regimes, providing information on voltage derivatives of interface resistance and capacitance, from which device characteristics such as Schottky barrier height, etc., can be estimated. (c) 2006 American Institute of Physics.
Type of Material
Journal Article
Publisher
American Institute of Physics
Journal
Applied Physics Letters
Volume
88
Issue
14
Start Page
1431281
End Page
1431283
Copyright (Published Version)
2006 American Institute of Physics
Language
English
Status of Item
Peer reviewed
This item is made available under a Creative Commons License
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