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A Fully Integrated Bluetooth Low-Energy Transmitter in 28 nm CMOS With 36% System Efficiency at 3 dBm
Date Issued
2016-05-23
Date Available
2017-05-10T10:12:27Z
Abstract
We propose a new transmitter architecture for ultra-low power radios in which the most energy-hungry RF circuits operate at a supply just above a threshold voltage of CMOS transistors. An all-digital PLL employs a digitally controlled oscillator with switching current sources to reduce supply voltage and power without sacrificing its startup margin. It also reduces 1/f noise and supply pushing, thus allowing the ADPLL, after settling, to reduce its sampling rate or shut it off entirely during a direct DCO data modulation. The switching power amplifier integrates its matching network while operating in class-E/F2 to maximally enhance its efficiency at low voltage. The transmitter is realized in 28 nm digital CMOS and satisfies all metal density and other manufacturing rules. It consumes 3.6 mW/5.5 mW while delivering 0 dBm/3 dBm RF power in Bluetooth Low-Energy mode.
Sponsorship
European Research Council
Type of Material
Journal Article
Publisher
IEEE
Journal
IEEE Journal of Solid-State Circuits
Volume
51
Issue
7
Start Page
1547
End Page
1565
Copyright (Published Version)
2016 IEEE
Language
English
Status of Item
Peer reviewed
This item is made available under a Creative Commons License
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70
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