Now showing 1 - 2 of 2
  • Publication
    Scaling of laser produced plasma UTA emission down to 3 nm for next generation lithography and short wavelength imaging
    An engineering prototype high average power 13.5-nm source has been shipped to semiconductor facilities to permit the commencement of high volume production at a 100 W power level in 2011. In this source, UTA (unresolved transition array) emission of highly ionized Sn is optimized for high conversion efficiency and full recovery of the injected fuel is realized through ion deflection in a magnetic field. By use of a low-density target, satellite emission is suppressed and full ionization attained with short pulse CO2 laser irradiation. The UTA is scalable to shorter wavelengths, and Gd is shown to have similar conversion efficiency to Sn (13.5 nm) at a higher plasma temperature, with a narrow spectrum centered at 6.7 nm, where a 70% reflectivity mirror is anticipated. Optimization of short pulse CO2 laser irradiation is studied, and further extension of the same method is discussed, to realize 100 W average power down to a wavelength of 3 nm
      678Scopus© Citations 9
  • Publication
    Transition wavelengths and unresolved transition array statistics of ions with Z = 72 − 89
    (Institute of Physics, 2011-08-28)
    Potential extreme ultraviolet and soft x-ray radiation sources have been identified, using the flexible atomic code (FAC), as emission peaks arising from the 4d–4f and 4p–4d transitions in Pd-like to Rb-like ions of hafnium through actinium. The effects of configuration interaction are investigated and for increasing nuclear charge, these strong emitters are seen to separate and move to shorter wavelengths. Each source is characterized using the unresolved transition array model. They are proposed to complement the currently used nitrogen and argon sources in the 'water window', and as possible successors to tin in next-generation lithography.
      306Scopus© Citations 33