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Dual-Band Three-Way Doherty Power Amplifier Employing Dual-Mode Gate Bias and Load Compensation Network
Date Issued
2022-04
Date Available
2022-03-02T09:50:20Z
Abstract
This article presents a new method to design dual-band three-way Doherty power amplifiers (DPAs). A novel modified load modulation network (LMN) is constructed for enabling dual-mode Doherty operation with three-way configuration, providing enhanced high efficiency range in both modes. Moreover, a parallel load compensation network (LCN) is employed in the proposed three-way DPA to provide wideband performance in each operation band. A three-way dual-mode DPA using commercial gallium nitride high electron mobility transistors (GaN HEMTs) is then designed and manufactured to verify the proposed architecture. Frequency bands of 1.45-1.9 GHz in Mode I and 0.75-1.0 GHz in Mode II are achieved by the DPA, respectively. The fabricated DPA has a 9-dB output back-off (OBO) efficiency of 42.8%-57.7% and a saturated efficiency of 55.4%-70.1%. When driven by a 20-MHz long term evolution (LTE) modulated signal with 8-dB peak-to-average ratio (PAPR), the adjacent channel power ratio (ACPR) of the fabricated DPA is better than -49.9 dBc after digital predistortion at 0.9 and 1.7 GHz with average efficiency of 45.7% and 54.6%.
Sponsorship
Science Foundation Ireland
Other Sponsorship
National Natural Science Foundation of China
Natural Science Foundation of Chongqing
Type of Material
Journal Article
Publisher
IEEE
Journal
IEEE Transactions on Microwave Theory and Techniques
Volume
70
Issue
4
Start Page
2328
End Page
2340
Copyright (Published Version)
2022 IEEE
Language
English
Status of Item
Peer reviewed
ISSN
0018-9480
This item is made available under a Creative Commons License
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