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Probing intrinsic polarization properties in bismuth-layered ferroelectric films
Date Issued
2007-03-16
Date Available
2014-01-09T10:07:55Z
Abstract
The authors report on an approach to establish intrinsic polarization properties in bismuth-layered ferroelectric films by piezoelectric coefficient and soft-mode spectroscopy, as well as by a direct polarization-electric field hysteresis. In epitaxially grown (Bi4−xNdx)Ti3O12 (0⩽x⩽0.73)films, they show that these complementary characterizations can phenomenologically and thermodynamically represent the intrinsic polarization states in (Bi4−xNdx)Ti3O12films, and the intrinsic Ps of 67μC/cm2 is estimated for pure Bi4Ti3O12, superior to 50μC/cm2 in bulk single crystal. Their results provide a pathway to draw full potential in ferroelectric thin films.
Type of Material
Journal Article
Publisher
American Institute of Physics
Journal
Applied Physics Letters
Volume
90
Issue
11
Start Page
112914
Copyright (Published Version)
2007, American Institute of Physics
Language
English
Status of Item
Peer reviewed
This item is made available under a Creative Commons License
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Name
Watanabe_et_al_Appl_Phys_Lett_2007.pdf
Size
494.4 KB
Format
Adobe PDF
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