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Electronic properties of F/Zr co-doped anatase TiO2 photocatalysts from GGA + U calculations
Author(s)
Date Issued
2010-10-08
Date Available
2011-02-23T09:38:04Z
Abstract
The energetic and electronic properties of F and/or Zr-doped anatase TiO2 are investigated by first-principles calculations. For F-doping, reduced Ti3+ ions are formed and Ti orbitals lie slightly below the conduction band, leading to band gap narrowing. For Zr-doping, Zr 4d orbitals reside well into the conduction band, with essentially no band gap change. For F/Zr–codoping, the electronic structure is similar to that for F–monodoping, where Ti3+ gap states are induced by both the oxygen vacancy and F dopant. The influence of oxygen vacancies indicates that interplay between dopants and oxygen vacancies is key for improvement of photocatalytic activity. The theoretical findings present a reasonable explanation of recent experimental results.
Sponsorship
Science Foundation Ireland
Irish Research Council for Science, Engineering and Technology
Other funder
Other Sponsorship
Irish Centre for High-End Computing (ICHEC)
Type of Material
Journal Article
Publisher
Elsevier
Journal
Chemical Physics Letters
Volume
498
Issue
4-6
Start Page
338
End Page
344
Copyright (Published Version)
2010 Elsevier B.V.
Subject – LCSH
Titanium dioxide
Doped semiconductors
Electronic structure
Density functionals
Language
English
Status of Item
Peer reviewed
ISSN
0009-2614
This item is made available under a Creative Commons License
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Elec Properties of F Zr co doped anatase Tio2 2010.pdf
Size
5.85 MB
Format
Adobe PDF
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