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A wideband 60 GHz class-E/F2 power amplifier in 40nm CMOS
Author(s)
Date Issued
2015-05-19
Date Available
2015-12-17T10:57:09Z
Abstract
This paper presents a fully integrated 60 GHz power amplifier in 40nm CMOS that reaches the highest reported product of power-added efficiency and bandwidth. It is achieved through low/moderate coupling-factor transformers in the preliminary stages and a proper second harmonic termination of the output stage, such that it can operate as a class-E/F2 switched-mode PA at the saturation point. The three-stage PA delivers 17.9dBm saturated output power with 20% peak PAE. It demonstrates a bandwidth of 9.7 GHz with a peak gain of 21.6 dB.
Sponsorship
European Research Council
Type of Material
Conference Publication
Publisher
IEEE
Copyright (Published Version)
2015 IEEE
Language
English
Status of Item
Not peer reviewed
Journal
Proceedings of 2015 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2015
Conference Details
2015 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Phoenix, Arizona, USA, 17 - 19 May 2015
This item is made available under a Creative Commons License
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Name
1009-OLPVUnQiXyVp-2.pdf
Size
1.75 MB
Format
Adobe PDF
Checksum (MD5)
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