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Investigation of the mechanism of polarization switching in ferroelectric capacitors by three- dimensional piezoresponse force microscopy
Date Issued
2005-01
Date Available
2015-11-18T11:07:18Z
Abstract
A mechanism for the switching behavior of (111)-oriented Pb(Zr,Ti)O3-based 1×1.5 μm2 capacitors has been investigated using three-dimensional piezoresponse force microscopy (3D-PFM). A combination of vertical and lateral piezoresponse force microscopy (VPFM and LPFM) has been used to map the out-of-plane and the in-plane components of the polarization. The three-dimensional polarization distribution was reconstructed by quantitative analysis of the PFM amplitude images of poled PZT capacitors while taking into account contrast variations in the PFM phase images. The switching behavior of the capacitors was determined by comparison of the static domain patterns in the same capacitors after both positive and negative poling. While 180° degree switching was observed, surprisingly, the switching process was dominated by 90° polarization vector rotation. Furthermore, central regions of the capacitors were characterized by the presence of charged domain boundaries, which could lead to imprint (preference of one polarization state over another.
Other Sponsorship
National Science Foundation
Fujitsu Limited
Type of Material
Journal Article
Publisher
Springer
Journal
Applied Physics A: Materials Science and Processing
Volume
80
Issue
1
Start Page
99
End Page
103
Copyright (Published Version)
2004 Springer
Language
English
Status of Item
Peer reviewed
This item is made available under a Creative Commons License
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