Broadband Fully Integrated GaN Power Amplifier With Embedded Minimum Inductor Bandpass Filter and AM-PM Compensation

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Title: Broadband Fully Integrated GaN Power Amplifier With Embedded Minimum Inductor Bandpass Filter and AM-PM Compensation
Authors: Nikandish, GholamrezaStaszewski, Robert BogdanZhu, Anding
Permanent link: http://hdl.handle.net/10197/10907
Date: 2019
Online since: 2019-07-12T10:44:32Z
Abstract: In this paper, we present a design technique for broadband linearized fully integrated GaN power amplifiers (PAs). The minimum inductor bandpass filter structure is used as the output matching network to achieve low loss and high out-of-band attenuation. Two parallel transistors with unbalanced gate biases are used to mitigate nonlinearity of their transconductance and input capacitance, and consequently, compensate AM-PM distortion of the PA. A fully integrated GaN PA prototype provides 35.1–38.9 dBm output power and 40-55% power-added efficiency (PAE) in 2.0–4.0 GHz. For a 64-QAM signal with 8-dB peak-to-average power ratio (PAPR) and 100-MHz bandwidth at 2.4 GHz, average output power of 32.7 dBm and average PAE of 31% are measured with −30.2 dB error vector magnitude (EVM).
Funding Details: Science Foundation Ireland
Type of material: Journal Article
Publisher: IEEE
Journal: IEEE Solid-State Circuits Letters
Start page: 1
End page: 1
Copyright (published version): 2019 IEEE
Keywords: 5GAM-PMBroadband amplifierGaNMonolithic microwave integrated circuit (MMIC)Power amplifier
DOI: 10.1109/lssc.2019.2927855
Language: en
Status of Item: Peer reviewed
Appears in Collections:Electrical and Electronic Engineering Research Collection

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