A Fully Integrated Reconfigurable Multi-Mode Class-F2,3 GaN Power Amplifier

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Title: A Fully Integrated Reconfigurable Multi-Mode Class-F2,3 GaN Power Amplifier
Authors: Nikandish, GholamrezaStaszewski, Robert BogdanZhu, Anding
Permanent link: http://hdl.handle.net/10197/12019
Date: 31-Jul-2020
Online since: 2021-03-10T16:43:46Z
Abstract: In this paper, we propose a reconfigurable multi-mode fully integrated power amplifier (PA) in GaN technology. The PA is composed of one main transistor, biased in class-AB, and three auxiliary transistors which can be switched between class-AB and deep class-C, to improve efficiency and linearity of the PA. Furthermore, a harmonic termination network is proposed to enable operation of the PA in class-F2,3. A proof-of-concept PA, fabricated using a 250-nm GaN-on-SiC process, provides 33.8 dBm output power and 42% peak drain efficiency (DE) at 4.8 GHz. Modulated-signal measurements using a 200-MHz 256-QAM 7.2-dB peak-to-average power ratio (PAPR) signal indicate that rms error vector magnitude (EVMrms) < 5% (–26 dB) can be achieved with 27.7–28.5 dBm average output power, 26–30% average DE, and –38.1 to –33.5 dBc adjacent channel leakage ratio (ACLR), in the four operation modes. It is shown that ACLR can be improved by 6 dB at lower output power levels through reconfiguring the mode of PA operation.
Funding Details: Science Foundation Ireland
Type of material: Journal Article
Publisher: IEEE
Journal: IEEE Solid-State Circuits Letters
Volume: 3
Start page: 270
End page: 273
Copyright (published version): 2020 IEEE
Keywords: TransistorsPower generationCapacitanceLinearityGainGallium nitrideLogic gates
DOI: 10.1109/lssc.2020.3013430
Language: en
Status of Item: Peer reviewed
ISSN: 2573-9603
This item is made available under a Creative Commons License: https://creativecommons.org/licenses/by-nc-nd/3.0/ie/
Appears in Collections:Electrical and Electronic Engineering Research Collection

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