Cryogenic Low-Drop-Out Regulators Fully Integrated with Quantum Dot Array in 22-nm FD-SOI CMOS

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Title: Cryogenic Low-Drop-Out Regulators Fully Integrated with Quantum Dot Array in 22-nm FD-SOI CMOS
Authors: Andrade-Miceli, DennisEsmailiyan, AliBisiaux, PierreBlokhina, ElenaSiriburanon, TeerachotBashir, ImranAsker, MikeLeipold, DirkStaszewski, Robert Bogdan
Permanent link: http://hdl.handle.net/10197/12725
Date: 25-Jun-2021
Online since: 2022-01-13T14:11:26Z
Abstract: This brief presents two monolithically integrated output-capacitor-less ("caples") low-drop-out (LDO) linear regulators implemented in 22-nm fully depleted silicon-on-insulator (FD-SOI) to support on-die scalable CMOS charge-based quantum processing unit (QPU). The proposed LDOs are used to regulate 0.8 V and 1.5 V input voltages for the programmable capacitive digital-to-analog converter (CDAC) and single-electron detector, respectively. Measured results show that both LDOs can maintain their respective output voltages with a maximum deviation <2% from ~270 K down to ~ 3.7 K.
Type of material: Conference Publication
Publisher: IEEE
Copyright (published version): 2021 IEEE
Keywords: Cryogenic CMOSFD-SOILDOSingle-electron detectorPosition-based qubitsCharge qubitsQuantum dot (QD)Quantum dot array (QDA)Quantum processing unit (QPU)
DOI: 10.1109/IMS19712.2021.9574910
Other versions: https://ims-ieee.org/
Language: en
Status of Item: Peer reviewed
Is part of: 2021 IEEE MTT-S International Microwave Symposium (IMS)
Conference Details: IEEE MTT-S International Microwave Symposium (IMS), Atlanta, Georgia, United States of America, 7-25 June 2021
This item is made available under a Creative Commons License: https://creativecommons.org/licenses/by-nc-nd/3.0/ie/
Appears in Collections:Electrical and Electronic Engineering Research Collection

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