Dual-Band Three-Way Doherty Power Amplifier Employing Dual-Mode Gate Bias and Load Compensation Network
|Title:||Dual-Band Three-Way Doherty Power Amplifier Employing Dual-Mode Gate Bias and Load Compensation Network||Authors:||Gao, Ruibin; Pang, Jingzhou; Cai, Tianfu; Zhu, Anding; et al.||Permanent link:||http://hdl.handle.net/10197/12784||Date:||18-Feb-2022||Online since:||2022-03-02T09:50:20Z||Abstract:||This article presents a new method to design dual-band three-way Doherty power amplifiers (DPAs). A novel modified load modulation network (LMN) is constructed for enabling dual-mode Doherty operation with three-way configuration, providing enhanced high efficiency range in both modes. Moreover, a parallel load compensation network (LCN) is employed in the proposed three-way DPA to provide wideband performance in each operation band. A three-way dual-mode DPA using commercial gallium nitride high electron mobility transistors (GaN HEMTs) is then designed and manufactured to verify the proposed architecture. Frequency bands of 1.45-1.9 GHz in Mode I and 0.75-1.0 GHz in Mode II are achieved by the DPA, respectively. The fabricated DPA has a 9-dB output back-off (OBO) efficiency of 42.8%-57.7% and a saturated efficiency of 55.4%-70.1%. When driven by a 20-MHz long term evolution (LTE) modulated signal with 8-dB peak-to-average ratio (PAPR), the adjacent channel power ratio (ACPR) of the fabricated DPA is better than -49.9 dBc after digital predistortion at 0.9 and 1.7 GHz with average efficiency of 45.7% and 54.6%.||Funding Details:||Science Foundation Ireland||Funding Details:||National Natural Science Foundation of China
Natural Science Foundation of Chongqing
|Type of material:||Journal Article||Publisher:||IEEE||Journal:||IEEE Transactions on Microwave Theory and Techniques||Start page:||1||End page:||13||Copyright (published version):||2022 IEEE||Keywords:||Logic gates; Transistors; Bandwidth; Impedance; Wireless communication; Wideband; Voltage measurement||DOI:||10.1109/tmtt.2022.3149379||Language:||en||Status of Item:||Peer reviewed||ISSN:||0018-9480||This item is made available under a Creative Commons License:||https://creativecommons.org/licenses/by/3.0/ie/|
|Appears in Collections:||Electrical and Electronic Engineering Research Collection|
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