Simplified 1-D calculation of 13.5-nm emission in a tin plasma including radiation transport

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Title: Simplified 1-D calculation of 13.5-nm emission in a tin plasma including radiation transport
Authors: White, John Kingston
Dunne, Padraig
Hayden, Patrick
O'Sullivan, Gerry
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Date: 4-Dec-2009
Online since: 2011-01-14T17:18:42Z
Abstract: Many next generation lithography schemes for the semiconductor industry are based on a 13.5-nm tin plasma light source, where hundreds of thousands of 4d-4f, 4p-4d, and 4d-5p transitions from Sn5+–Sn13+ ions overlap to form an unresolved transition array. To aid computation, transition arrays are treated statistically, and Hartree-Fock results are used to calculate radiation transport in the optically thick regime with a 1-D Lagrangian plasma hydrodynamics code. Time-dependent spectra and conversion efficiencies of 2% in-band 13.5-nm emission to laser energy are predicted for a Nd:YAG laser incident on a pure tin slab target as a function of laser power density and pulse duration at normal incidence. Calculated results showed a maximum conversion efficiency of 2.3% for a 10-ns pulse duration at 8.0 x 1010 W/cm2 and are compared to experimental data where available. Evidence for the need to include lateral expansion is presented.
Funding Details: Science Foundation Ireland
Type of material: Journal Article
Publisher: American Institute of Physics
Journal: Journal of Applied Physics
Volume: 106
Issue: 11
Start page: 113303-1
End page: 113303-8
Copyright (published version): 2009 American Institute of Physics
Keywords: HF calculationsPlasma light propagationPlasma production by laser,Plasma simulation
Subject LCSH: Hartree-Fock approximation
Laser plasmas
Semiconductor industry--Laser use in
Extreme ultraviolet lithography
DOI: 10.1063/1.3264692
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Language: en
Status of Item: Peer reviewed
Appears in Collections:Physics Research Collection

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