Gd plasma source modeling at 6.7 nm for future lithography

DC FieldValueLanguage
dc.contributor.authorLi, Bowen
dc.contributor.authorDunne, Padraig
dc.contributor.authorHigashiguchi, Takeshi
dc.contributor.authorOtsuka, Takamitsu
dc.contributor.authorYugami, Noboru
dc.contributor.authorJiang, Weihua
dc.contributor.authorEndo, Akira
dc.contributor.authorO'Sullivan, Gerry
dc.date.accessioned2012-04-17T08:35:07Z
dc.date.available2012-04-17T08:35:07Z
dc.date.copyright2011 American Institute of Physicsen
dc.date.issued2011-12-05
dc.identifier.citationApplied Physics Lettersen
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10197/3564
dc.description.abstractPlasmas containing gadolinium have been proposed as sources for next generation lithography at 6.x nm. To determine the optimum plasma conditions, atomic structure calculations have been performed for Gd11+ to Gd27+ ions which showed that n=4 - n=4 resonance transitions overlap in the 6.5 – 7.0 nm region. Plasma modeling calculations, assuming collisional-radiative equilibrium, predict that the optimum temperature for an optically thin plasma is close to 110 eV and that maximum intensity occurs at 6.76 nm under these conditions. The close agreement observed between simulated and experimental spectra from laser and discharge produced plasmas indicates the validity of our approach.en
dc.description.sponsorshipScience Foundation Irelanden
dc.format.extent389203 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.rightsThe following article appeared in Applied Physics Letters 99, 231502 (2011) DOI: http://dx.doi.org/10.1063/1.3666042 and may be found at http://apl.aip.org/resource/1/applab/v99/i23/p231502_s1. The article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.subjectPlasmaen
dc.subject.lcshLaser plasmasen
dc.subject.lcshGadoliniumen
dc.subject.lcshLithographyen
dc.titleGd plasma source modeling at 6.7 nm for future lithographyen
dc.typeJournal Articleen
dc.internal.availabilityFull text availableen
dc.internal.webversionshttp://dx.doi.org/10.1063/1.3666042-
dc.statusPeer revieweden
dc.identifier.volume99en
dc.identifier.issue23en
dc.identifier.startpage231502en
dc.identifier.doi10.1063/1.3666042-
dc.neeo.contributorLi|Bowen|aut|-
dc.neeo.contributorDunne|Padraig|aut|-
dc.neeo.contributorHigashiguchi|Takeshi|aut|-
dc.neeo.contributorOtsuka|Takamitsu|aut|-
dc.neeo.contributorYugami|Noboru|aut|-
dc.neeo.contributorJiang|Weihua|aut|-
dc.neeo.contributorEndo|Akira|aut|-
dc.neeo.contributorO'Sullivan|Gerry|aut|-
dc.description.adminab, li - TS 27.03.12en
item.grantfulltextopen-
item.fulltextWith Fulltext-
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