UTA versus line emission for EUVL : studies on xenon emission at the NIST EBIT
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|Title:||UTA versus line emission for EUVL : studies on xenon emission at the NIST EBIT||Authors:||Fahy, Kenneth
White, John K.
|Permanent link:||http://hdl.handle.net/10197/3728||Date:||Dec-2004||Abstract:||Spectra from xenon ions have been recorded at the NIST EBIT and the emission into a 2% bandwidth at 13.5 nm arising from 4d_5p transitions compared with that from 4d_4f and 4p_4d transitions in Xe XI and also with that obtained from the unresolved transition array (UTA) observed to peak just below 11 nm. It was found that an improvement of a factor of five could be gained in photon yield using the UTA rather than the 4d_5p emission. The results are compared with atomic structure calculations and imply that a significant gain in efficiency should be obtained using tin, in which the emission at 13.5 nm comes from a similar UTA, rather than xenon as an EUVL source material.||Funding Details:||Science Foundation Ireland||Type of material:||Journal Article||Publisher:||IOP Publishing||Copyright (published version):||2004 IOP Publishing||Keywords:||EUV||Subject LCSH:||Ultraviolet radiation
Extreme ultraviolet lithography
|DOI:||10.1088/0022-3727/37/23/003||Language:||en||Status of Item:||Peer reviewed|
|Appears in Collections:||Physics Research Collection|
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