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Individual switching of film-based nanoscale epitaxial ferroelectric capacitors
Author(s)
Date Issued
2010-08
Date Available
2013-11-29T12:54:37Z
Abstract
We have investigated the individual switching of nanoscale capacitors by piezoresponse force microscopy. Nanoscale epitaxial ferroelectric capacitors with terabyte per inch square equivalent density were fabricated by the deposition of top electrodes onto a pulsed laser deposited lead zirconate titanate thin film by electron beam evaporation through ultrathin anodic aluminum oxide membrane stencil masks. Using bias pulses, the nanoscale capacitors were uniformly switched and proved to be individually addressable. These film-based nanoscale capacitors might be a feasible alternative for high-density mass storage memory applications with near terabyte per inch square density due to the absence of any cross-talk effects. (C) 2010 American Institute of Physics. [doi:10.1063/1.3474960]
Other Sponsorship
Alexander von Humboldt Foundation (Y.K. and B.J.R.)
KRCF through the project “Development of Advanced Industrial Metrology”
German Science Foundation (DFG)
Korean Research Foundation
Type of Material
Journal Article
Publisher
AIP Publishing
Journal
Journal of Applied Physics
Volume
108
Issue
4
Start Page
042005-1
End Page
042005-4
Copyright (Published Version)
2010 American Institute of Physics
Language
English
Status of Item
Peer reviewed
This item is made available under a Creative Commons License
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