Ferroelectric domain wall pinning at a bicrystal grain boundary in bismuth ferrite

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Title: Ferroelectric domain wall pinning at a bicrystal grain boundary in bismuth ferrite
Authors: Rodriguez, Brian J.
Chu, Y. H.
Ramesh, R.
Kalinin, S. V.
Permanent link: http://hdl.handle.net/10197/5197
Date: Oct-2008
Online since: 2013-12-19T09:35:03Z
Abstract: The ferroelectric polarization switching behavior at the 24 degrees (100) tilt grain boundary (GB) in an epitaxial multiferroic BiFeO3 bicrystal film is studied using piezoresponse force microscopy (PFM). The PFM amplitudes across positively and negatively poled GB regions suggest the presence of a frozen polarization component at the interface. The switching experiments demonstrate that the GB attracts the domain wall and acts as a pinning center. The PFM results are compared with conductive atomic force microscopy and spectroscopy, which suggest domain wall pinning at the GB can be partially attributed to increased conductance at the GB.
Funding Details: Other funder
Type of material: Journal Article
Publisher: AIP
Journal: Applied Physics Letters
Volume: 93
Issue: 14
Start page: 142901
Copyright (published version): 2008 American Institute of Physics
Keywords: PolarizationFerroelectricPiezoresponse force microscopyDomain structureTilt grain boundary
DOI: 10.1063/1.2993327
Other versions: http://link.aip.org/link/?APPLAB/93/142901/1
Language: en
Status of Item: Peer reviewed
Appears in Collections:Physics Research Collection

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