Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy
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|Title:||Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy||Authors:||Zhao, Z. Y
Zhang, W. M.
Rodriguez, Brian J.
|Permanent link:||http://hdl.handle.net/10197/5204||Date:||3-Mar-2008||Abstract:||In order to better understand dopant incorporation in quantum dot infrared photodetectors, the application of cross-sectional scanning capacitance microscopy (SCM) has been used to investigate carrier occupation/distribution in a multilayer InAs/GaAs quantum dot (QD) heterostructure for different doping techniques. The doping schemes in the QD structure include direct doping (in InAs QD layers) and remote doping (in GaAs barrier layers), each with different doping concentrations. The SCM image suggests that large band bending occurs due to highly doped, remote-doping layers, thereby causing electron redistribution in direct-doping layers. The experimental result is supported by a band structure calculation using the Schrödinger–Poisson method by NEXTNANO3.||Type of material:||Journal Article||Publisher:||American Institute of Physics||Journal:||Applied Physics Letters||Volume:||92||Issue:||8||Start page:||092101||Copyright (published version):||2008 American Institute of Physics||Keywords:||Doping schemes||DOI:||10.1063/1.2889938||Language:||en||Status of Item:||Peer reviewed|
|Appears in Collections:||Physics Research Collection|
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