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Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy
Author(s)
Date Issued
2008-03-03
Date Available
2013-12-19T10:00:14Z
Abstract
In order to better understand dopant incorporation in quantum dot infrared photodetectors, the application of cross-sectional scanning capacitance microscopy (SCM) has been used to investigate carrier occupation/distribution in a multilayer InAs/GaAs quantum dot (QD) heterostructure for different doping techniques. The doping schemes in the QD structure include direct doping (in InAs QD layers) and remote doping (in GaAs barrier layers), each with different doping concentrations. The SCM image suggests that large band bending occurs due to highly doped, remote-doping layers, thereby causing electron redistribution in direct-doping layers. The experimental result is supported by a band structure calculation using the Schrödinger–Poisson method by NEXTNANO3.
Type of Material
Journal Article
Publisher
American Institute of Physics
Journal
Applied Physics Letters
Volume
92
Issue
8
Start Page
092101
Copyright (Published Version)
2008 American Institute of Physics
Keywords
Language
English
Status of Item
Peer reviewed
This item is made available under a Creative Commons License
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