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Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures
Date Issued
2005-03
Date Available
2014-02-04T09:58:02Z
Abstract
Scanning Kelvin probe microscopy (SKPM) and electrostatic force microscopy (EFM) have been employed to measure the surface potentials and the surface charge densities of the Ga- and the N-face of a GaN lateral polarity heterostructure (LPH). The surface was subjected to an HCl surface treatment to address the role of adsorbed charge on polarization screening. It has been found that while the Ga-face surface appears to be unaffected by the surface treatment, the N-face surface exhibited an increase in adsorbed screening charge density (1.6 +/- 0.5x10(10) cm(-2)), and a reduction of 0.3 +/- 0.1 V in the surface potential difference between the N- and Ga-face surfaces.
Other Sponsorship
Office of Naval
Research MURI on Polarization Electronics
National Science Foundation
Type of Material
Journal Article
Publisher
American Institute of Physics
Journal
Applied Physics Letters
Volume
86
Issue
11
Start Page
112115
Copyright (Published Version)
2005 American Institute of Physics
Language
English
Status of Item
Peer reviewed
This item is made available under a Creative Commons License
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