Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001)

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Title: Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001)
Authors: Mecouch, W. J.
Wagner, B. P.
Reitmeier, Z. J.
Rodriguez, Brian J.
et al.
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Date: Jan-2005
Online since: 2014-02-04T10:12:30Z
Abstract: In situ exposure of the. (0001) surface of AlN thin films to flowing ammonia at 1120 degreesC and 10(-4) Torr removes oxygen/hydroxide and hydrocarbon species below the detectable limits of x-ray photoelectron spectroscopy and decreases the Al/N ratio from 1.3 to 1.0. The positions of the Al 2p and the N 1s core level peaks acquired from the cleaned surfaces were 75.0 +/- 0.1 eV and 398.2 +/- 0.1 eV, respectively, which were similar to the values determined for the as-loaded samples. The cleaning process left unchanged the (1 X 1) low energy electron diffraction pattern, the step-and-terrace microstructure, and the root mean square roughness values observed for the surfaces of the as-loaded samples; i.e., the surface structure and microstructure were not changed by the high-temperature exposure to ammonia at low pressures. Vacuum annealing under 10(-7) Torr at 1175 degreesC for 15 min removed all detectable hydrocarbons; however, it did not remove the oxygen/hydroxide species. (C) 2005 American Vacuum Society.
Type of material: Journal Article
Publisher: American Vacuum Society
Journal: Journal of Vacuum Science and Technology A
Volume: 23
Issue: 1
Start page: 72
End page: 77
Copyright (published version): 2005 American Vacuum Society
Keywords: AIN thin films
DOI: 10.1116/1.1830497
Language: en
Status of Item: Peer reviewed
Appears in Collections:Physics Research Collection

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