Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures
Files in This Item:
|Park_et_al_J_Appl_Phys_Lett_2003.pdf||237.44 kB||Adobe PDF||Download|
|Title:||Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures||Authors:||Park, M.
Cuomo, J. J.
Rodriguez, Brian J.
|Permanent link:||http://hdl.handle.net/10197/5372||Date:||Jun-2003||Abstract:||The electronic properties of inversion domains in a GaN-based lateral polarity heterostructure were investigated using micro-Raman spectroscopy. The piezoelectric polarization of each domain was calculated from strain determined via Raman scattering. The free carrier concentration and electron mobility were deduced from the longitudinal optical phonon-plasmon coupled mode. The electron concentration in the N-face domain was slightly higher than that in the Ga-face domain. It appears that during growth, a larger number of donor impurities may have been incorporated into the N-face domain than into the Ga-face domain.||Type of material:||Journal Article||Publisher:||American Institute of Physics||Copyright (published version):||2003 American Institute of Physics||Keywords:||Piezoelectric polarization; Raman scattering; Micro-Raman spectroscopy||DOI:||10.1063/1.1570507||Language:||en||Status of Item:||Peer reviewed|
|Appears in Collections:||Physics Research Collection|
Show full item record
Page view(s) 5045
This item is available under the Attribution-NonCommercial-NoDerivs 3.0 Ireland. No item may be reproduced for commercial purposes. For other possible restrictions on use please refer to the publisher's URL where this is made available, or to notes contained in the item itself. Other terms may apply.