Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

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Title: Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures
Authors: Park, M.
Cuomo, J. J.
Rodriguez, Brian J.
et al.
Permanent link: http://hdl.handle.net/10197/5372
Date: Jun-2003
Abstract: The electronic properties of inversion domains in a GaN-based lateral polarity heterostructure were investigated using micro-Raman spectroscopy. The piezoelectric polarization of each domain was calculated from strain determined via Raman scattering. The free carrier concentration and electron mobility were deduced from the longitudinal optical phonon-plasmon coupled mode. The electron concentration in the N-face domain was slightly higher than that in the Ga-face domain. It appears that during growth, a larger number of donor impurities may have been incorporated into the N-face domain than into the Ga-face domain.
Type of material: Journal Article
Publisher: American Institute of Physics
Copyright (published version): 2003 American Institute of Physics
Keywords: Piezoelectric polarizationRaman scatteringMicro-Raman spectroscopy
DOI: 10.1063/1.1570507
Language: en
Status of Item: Peer reviewed
Appears in Collections:Physics Research Collection

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