Piezoresponse force microscopy for polarity imaging of GaN

DC FieldValueLanguage
dc.contributor.authorRodriguez, Brian J.-
dc.contributor.authorGruverman, A.-
dc.contributor.authorKingon, A. I.-
dc.contributor.authoret al.-
dc.date.accessioned2014-02-06T11:57:09Z-
dc.date.available2014-02-06T11:57:09Z-
dc.date.copyright2002 American Institute of Physicsen
dc.date.issued2002-06-
dc.identifier.citationApplied Physics Lettersen
dc.identifier.urihttp://hdl.handle.net/10197/5377-
dc.description.abstractThe polarity distribution of GaN based lateral polarity heterostructures is investigated by piezoresponse force microscopy (PFM). Simultaneous imaging of surface morphology, as well as the phase and magnitude of the piezoelectric response, is performed by PFM on a GaN film with patterned polarities on a c-Al2O3 substrate. We demonstrate that the polarity distribution of GaN based lateral polarity heterostructures can be deduced from the phase image of the piezoresponse with nanometer scale spatial resolution.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.subjectPolarity distributionen
dc.subjectPiezoresponse force microscopyen
dc.subjectPiezoresponse responseen
dc.titlePiezoresponse force microscopy for polarity imaging of GaNen
dc.typeJournal Articleen
dc.internal.authorcontactotherbrian.rodriguez@ucd.ie-
dc.internal.availabilityFull text availableen
dc.statusPeer revieweden
dc.identifier.volume80en
dc.identifier.issue22en
dc.identifier.startpage4166en
dc.identifier.endpage4168en
dc.identifier.doi10.1063/1.1483117-
dc.neeo.contributorRodriguez|Brian J.|aut|-
dc.neeo.contributorGruverman|A.|aut|-
dc.neeo.contributorKingon|A. I.|aut|-
dc.neeo.contributoret al.||aut|-
dc.description.othersponsorshipOffice of Naval Research MURI on Polarization Electronicsen
dc.description.adminAuthor has checked copyrighten
dc.description.adminAD 16/01/2014en
dc.internal.rmsid130174022-
dc.date.updated2013-11-25T11:50:50Z-
item.grantfulltextopen-
item.fulltextWith Fulltext-
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