Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials

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Title: Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials
Authors: Rodriguez, Brian J.
Gruverman, A.
Kingon, A. I.
Nemanich, R. J.
Permanent link: http://hdl.handle.net/10197/7230
Date: Dec-2002
Online since: 2015-11-18T10:57:54Z
Abstract: Piezoelectric constants and polarity distributions of epitaxial AlN and GaN thin films are investigated by piezoresponse force microscopy (PFM). The magnitude of the effective longitudinal piezoelectric constant d(33) is determined to be 3+/-1 and 2+/-1 pm/V for wurtzite AlN and GaN/AlN layers grown by organo-metallic vapor phase epitaxy on SiC substrates, respectively. Simultaneous imaging of surface morphology as well as the phase and magnitude of the piezoelectric response is performed by PFM on a GaN film with patterned polarities on a c-Al2O3 substrate. We demonstrate that the polarity distribution of GaN based lateral polarity heterostructures can be deduced from the phase image of the piezoresponse with nanometer scale spatial resolution. We also present images of AlN/Si samples with regions of opposite piezoresponse phase, which indicate the presence of antiphase domains. We discuss the potential application of this technique for determination of the orientation of bulk crystals.
Type of material: Journal Article
Publisher: Elsevier
Journal: Journal of Crystal Growth
Volume: 246
Issue: 3-4
Start page: 252
End page: 258
Copyright (published version): 2002 Elsevier
Keywords: Atomic force microscopyPiezoelectric materialsSemiconducting III–V materials
DOI: 10.1016/S0022-0248(02)01749-9
Language: en
Status of Item: Peer reviewed
Appears in Collections:Physics Research Collection

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