A wideband 60 GHz class-E/F2 power amplifier in 40nm CMOS

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Title: A wideband 60 GHz class-E/F2 power amplifier in 40nm CMOS
Authors: Babaie, Masoud
Staszewski, Robert Bogdan
Permanent link: http://hdl.handle.net/10197/7317
Date: 19-May-2015
Abstract: This paper presents a fully integrated 60 GHz power amplifier in 40nm CMOS that reaches the highest reported product of power-added efficiency and bandwidth. It is achieved through low/moderate coupling-factor transformers in the preliminary stages and a proper second harmonic termination of the output stage, such that it can operate as a class-E/F2 switched-mode PA at the saturation point. The three-stage PA delivers 17.9dBm saturated output power with 20% peak PAE. It demonstrates a bandwidth of 9.7 GHz with a peak gain of 21.6 dB.
Funding Details: European Research Council
Type of material: Conference Publication
Publisher: IEEE
Copyright (published version): 2015 IEEE
Keywords: Power amplifierMm-waveClass-E/F2Switched-modeTransformerPA stability
DOI: 10.1109/RFIC.2015.7337743
Language: en
Status of Item: Not peer reviewed
Is part of: Proceedings of 2015 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2015
Conference Details: 2015 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Phoenix, Arizona, USA, 17 - 19 May 2015
Appears in Collections:Electrical and Electronic Engineering Research Collection

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