A wideband 60 GHz class-E/F2 power amplifier in 40nm CMOS
|Title:||A wideband 60 GHz class-E/F2 power amplifier in 40nm CMOS||Authors:||Babaie, Masoud
Staszewski, Robert Bogdan
|Permanent link:||http://hdl.handle.net/10197/7317||Date:||19-May-2015||Abstract:||This paper presents a fully integrated 60 GHz power amplifier in 40nm CMOS that reaches the highest reported product of power-added efficiency and bandwidth. It is achieved through low/moderate coupling-factor transformers in the preliminary stages and a proper second harmonic termination of the output stage, such that it can operate as a class-E/F2 switched-mode PA at the saturation point. The three-stage PA delivers 17.9dBm saturated output power with 20% peak PAE. It demonstrates a bandwidth of 9.7 GHz with a peak gain of 21.6 dB.||Funding Details:||European Research Council||Type of material:||Conference Publication||Publisher:||IEEE||Copyright (published version):||2015 IEEE||Keywords:||Power amplifier; Mm-wave; Class-E/F2; Switched-mode; Transformer; PA stability||DOI:||10.1109/RFIC.2015.7337743||Language:||en||Status of Item:||Not peer reviewed||Is part of:||Proceedings of 2015 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2015||Conference Details:||2015 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Phoenix, Arizona, USA, 17 - 19 May 2015|
|Appears in Collections:||Electrical and Electronic Engineering Research Collection|
Show full item record
This item is available under the Attribution-NonCommercial-NoDerivs 3.0 Ireland. No item may be reproduced for commercial purposes. For other possible restrictions on use please refer to the publisher's URL where this is made available, or to notes contained in the item itself. Other terms may apply.