A Fully Integrated Bluetooth Low-Energy Transmitter in 28 nm CMOS With 36% System Efficiency at 3 dBm

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Title: A Fully Integrated Bluetooth Low-Energy Transmitter in 28 nm CMOS With 36% System Efficiency at 3 dBm
Authors: Babaie, Masoud
Kuo, Feng-Wei
Chen, Ron
Staszewski, Robert Bogdan
et al.
Permanent link: http://hdl.handle.net/10197/8498
Date: 23-May-2016
Online since: 2017-05-10T10:12:27Z
Abstract: We propose a new transmitter architecture for ultra-low power radios in which the most energy-hungry RF circuits operate at a supply just above a threshold voltage of CMOS transistors. An all-digital PLL employs a digitally controlled oscillator with switching current sources to reduce supply voltage and power without sacrificing its startup margin. It also reduces 1/f noise and supply pushing, thus allowing the ADPLL, after settling, to reduce its sampling rate or shut it off entirely during a direct DCO data modulation. The switching power amplifier integrates its matching network while operating in class-E/F2 to maximally enhance its efficiency at low voltage. The transmitter is realized in 28 nm digital CMOS and satisfies all metal density and other manufacturing rules. It consumes 3.6 mW/5.5 mW while delivering 0 dBm/3 dBm RF power in Bluetooth Low-Energy mode.
Funding Details: European Research Council
Type of material: Journal Article
Publisher: IEEE
Journal: IEEE Journal of Solid-State Circuits
Volume: 51
Issue: 7
Start page: 1547
End page: 1565
Copyright (published version): 2016 IEEE
Keywords: Switching current-source oscillatorAll-digital PLLBluetooth Low-EnergyInternet of Things (IoT)Low-power transmitterLow-voltage oscillator
DOI: 10.1109/JSSC.2016.2551738
Language: en
Status of Item: Peer reviewed
Appears in Collections:Electrical and Electronic Engineering Research Collection

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