Now showing 1 - 2 of 2
  • Publication
    A 28-GHz Switched-Filter Phase Shifter with Fine Phase-Tuning Capability Using Back-Gate Biasing in 22-nm FD-SOI CMOS
    This paper introduces a phase shifter based on switched filters for mm-wave 5G MIMO transmitters. It is realized in 22 nm FD-SOI CMOS and exploits the use of back-gate biasing. The new approach features strong tolerance to process, voltage and temperature (PVT) variations and thus can maintain low phase error with fine phase tuning capability supporting a large bandwidth. Measurement results show that the 4-bit phase shifter achieves 3.5° rms phase error at 28 GHz. The proposed phase shifter can maintain <5° of the worst-case rms phase error when operating across 24 to 29.5 GHz resulting in 20.56% fractional bandwidth which is the largest among the published switched-filter phase shifters to date.
      233Scopus© Citations 3
  • Publication
    A Low Profile Highly Isolated Phased Array MIMO Antenna System for 5G Applications at 28 GHz
    This paper presents a highly isolated phased array antenna system for 5G applications at 28 GHz. The antenna array is formed by 1x8 microstrip antipodal exponential tapered slot antennas each connected to CMOS phase shifters with wire bonds for electrical beam steering. At 28 GHz, the mutual coupling between the antenna elements are lower than -30 dB while the envelope correlation between the ports is less than 0.1. The single antenna array element was fabricated on 20 mil thick Rogers 4003 substrate and the phase shifter was fabricated in 22 nm FD-SOI CMOS. The simulated and measured results of the single antenna element along with the integrated phase shifter are presented together with the simulation results of the overall system.
      328Scopus© Citations 2