Nikandish, GholamrezaGholamrezaNikandishStaszewski, Robert BogdanRobert BogdanStaszewskiZhu, AndingAndingZhu2021-03-102021-03-102020 IEEE2020-07-31IEEE Solid-State Circuits Letters2573-9603http://hdl.handle.net/10197/12019In this paper, we propose a reconfigurable multi-mode fully integrated power amplifier (PA) in GaN technology. The PA is composed of one main transistor, biased in class-AB, and three auxiliary transistors which can be switched between class-AB and deep class-C, to improve efficiency and linearity of the PA. Furthermore, a harmonic termination network is proposed to enable operation of the PA in class-F2,3. A proof-of-concept PA, fabricated using a 250-nm GaN-on-SiC process, provides 33.8 dBm output power and 42% peak drain efficiency (DE) at 4.8 GHz. Modulated-signal measurements using a 200-MHz 256-QAM 7.2-dB peak-to-average power ratio (PAPR) signal indicate that rms error vector magnitude (EVMrms) < 5% (–26 dB) can be achieved with 27.7–28.5 dBm average output power, 26–30% average DE, and –38.1 to –33.5 dBc adjacent channel leakage ratio (ACLR), in the four operation modes. It is shown that ACLR can be improved by 6 dB at lower output power levels through reconfiguring the mode of PA operation.en© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.TransistorsPower generationCapacitanceLinearityGainGallium nitrideLogic gatesJournal Article327027310.1109/lssc.2020.30134302020-08-1313/RC/207716/IA/4449https://creativecommons.org/licenses/by-nc-nd/3.0/ie/