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Dual harmonic Kelvin probe force microscopy for surface potential measurements of ferroelectrics
Date Issued
2012-07
Date Available
2013-10-23T08:38:06Z
Abstract
In this work, we implemented dual harmonic Kelvin probe force microscopy (DH-KPFM) for surface potential mapping of ferroelectric thin films, namely bismuth ferrite
(BFO) and strontium barium niobate (SBN). We applied DH and conventional KPFM to charge-patterned BFO and found agreement between recorded relative surface potential values between domains, demonstrating that DH-KPFM can be used for
quantitative mapping of relative surface potentials. We used piezoresponse force microscopy (PFM) to determine whether polarization switching had occurred. From the PFM data, we found that BFO was poled successfully, and that the measured
surface potential was consistent with the sign of the bound polarization charge. For SBN, a thin surface layer was evident in the topography after the application of DC bias, suggesting an electrochemical reaction had taken place between the tip and the
sample. We used DH-KPFM to simultaneously map the surface potential and changes in the dielectric properties resulting from this surface layer. The results presented herein demonstrate that DH-KPFM can be used for electric characterization of voltagesensitive materials, and we anticipate that DH-KFPM will become a useful tool for non-intrusive electrical characterization of materials.
(BFO) and strontium barium niobate (SBN). We applied DH and conventional KPFM to charge-patterned BFO and found agreement between recorded relative surface potential values between domains, demonstrating that DH-KPFM can be used for
quantitative mapping of relative surface potentials. We used piezoresponse force microscopy (PFM) to determine whether polarization switching had occurred. From the PFM data, we found that BFO was poled successfully, and that the measured
surface potential was consistent with the sign of the bound polarization charge. For SBN, a thin surface layer was evident in the topography after the application of DC bias, suggesting an electrochemical reaction had taken place between the tip and the
sample. We used DH-KPFM to simultaneously map the surface potential and changes in the dielectric properties resulting from this surface layer. The results presented herein demonstrate that DH-KPFM can be used for electric characterization of voltagesensitive materials, and we anticipate that DH-KFPM will become a useful tool for non-intrusive electrical characterization of materials.
Sponsorship
Science Foundation Ireland
Other funder
Other Sponsorship
UCD Research and Science Foundation Ireland (10/RFP/MTR2855 and 07/IN1/B931). Australian Research Council (DP1092717 and DP110100262) Alexander von Humboldt Foundation
Type of Material
Conference Publication
Publisher
IEEE
Copyright (Published Version)
2012, IEEE
Language
English
Status of Item
Not peer reviewed
Journal
Proceedings of 2012 21st IEEE ISAF held jointly with 11th IEEE ECAPD and IEEE PFM (ISAF/ECAPD/PFM) : 9th-13th of July 2012 University of Aveiro Aveiro, Portugal
Conference Details
Applications of Ferroelectrics held jointly with 2012 European Conference on the Applications of Polar Dielectrics and 2012 International Symp Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials (ISAF/ECAPD/PFM), 2012 Intl. Symp., 9th-13th of July 2012 University of Aveiro Aveiro, Portugal
ISBN
978-1-4673-2668-1
This item is made available under a Creative Commons License
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2012_Collins_IEEE.pdf
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208.21 KB
Format
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Checksum (MD5)
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