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Ferroelectric domain wall pinning at a bicrystal grain boundary in bismuth ferrite
Date Issued
2008-10
Date Available
2013-12-19T09:35:03Z
Abstract
The ferroelectric polarization switching behavior at the 24 degrees (100) tilt grain boundary (GB) in an epitaxial multiferroic BiFeO3 bicrystal film is studied using piezoresponse force microscopy (PFM). The PFM amplitudes across positively and negatively poled GB regions suggest the presence of a frozen polarization component at the interface. The switching experiments demonstrate that the GB attracts the domain wall and acts as a pinning center. The PFM results are compared with conductive atomic force microscopy and spectroscopy, which suggest domain wall pinning at the GB can be partially attributed to increased conductance at the GB.
Sponsorship
Other funder
Other Sponsorship
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, managed
and operated by UT-Battelle, LLC for the Office of
Basic Energy Sciences, U.S. Department of Energy and the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering,
and U.S. Department of Energy under Contract No.
DE-AC02-05CH11231. the Alexander von Humboldt Foundation and National Science Council, R.O.C., under Contract No. NSC 97-3114-M-009-001.
Type of Material
Journal Article
Publisher
AIP
Journal
Applied Physics Letters
Volume
93
Issue
14
Start Page
142901
Copyright (Published Version)
2008 American Institute of Physics
Web versions
Language
English
Status of Item
Peer reviewed
This item is made available under a Creative Commons License
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Name
Rodriguez_et_al_Appl_Phys_Lett_2008_Domain_Wall_Pinning.pdf
Size
267.3 KB
Format
Adobe PDF
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