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Density functional theory studies of doping in Titania
Author(s)
Date Issued
2010-06
Date Available
2011-01-13T15:09:14Z
Abstract
The structural and electronic properties of rutile and anatase, and the influence of both mono- and co-doping, have been studied using Density Functional Theory. Ge-doped anatase and rutile exhibit different band gap-narrowing mechanisms; in particular, host Ti 3d states move to lower energy regions in anatase and Ge 4s impurities states locate below the conduction band of rutile. For S-doping, S 3p states locate above the top of the valence band and mix with O 2p states, leading to band gap narrowing. For Bi-doping, the energy levels of the Bi 6s states lie below the bottom of the conduction band while the Fermi level EF lies above the gap states, indicating the gap states are fully occupied. For Bi/S–codoping, both S 3p acceptor states and partially occupied Bi 6s donor states hybridised with S 3p appear simultaneously. For N- and W-monodoping, isolated N 2p states above the top of the valence band and W 5d states below the conduction band lead to band gap narrowing. N/W codoping yields significant band gap narrowing. Both studies for Bi/S and N/W codoping rationalise recent experimental data which show that these doped anatase systems exhibit higher visible-light photocatalytic efficiency than respective monodoping.
Sponsorship
Science Foundation Ireland
Irish Research Council for Science, Engineering and Technology
Type of Material
Journal Article
Publisher
Taylor and Francis
Journal
Molecular Simulation
Volume
36
Issue
7 & 8
Start Page
618
End Page
632
Copyright (Published Version)
2010 Taylor & Francis
Subject – LCSH
Titanium dioxide--Electric properties
Rutile
Semiconductor doping
Density functionals
Web versions
Language
English
Status of Item
Peer reviewed
ISSN
1029-0435 (electronic)
0892-7022 (paper)
This item is made available under a Creative Commons License
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tio2_molsim_rl_ne_longrun_24feb2010.pdf
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1.1 MB
Format
Adobe PDF
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