Flicker Noise Upconversion and Reduction Mechanisms in RF/Millimeter-Wave Oscillators for 5G Communications
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|Hu - Thesis of UCD - 2019 - Flicker Noise Upconversion and Reduction Mechanisms in RFMillimeter-Wave Oscillators for 5G Communications.pdf||8.47 MB||Adobe PDF||Download|
|Title:||Flicker Noise Upconversion and Reduction Mechanisms in RF/Millimeter-Wave Oscillators for 5G Communications||Authors:||Hu, Yizhe||Permanent link:||http://hdl.handle.net/10197/11459||Date:||19-Sep-2019||Online since:||2020-08-07T14:23:32Z||Abstract:||The fifth generation (5G) cellular communications in millimeter-wave (mmW) bands (e.g., 28GHz) place very tough requirements on phase noise (PN) of local oscillators (LO). However, in the advanced CMOS technology (e.g., 28nm, 16nm, 7nm, ...), the intrinsic 1/f current noise of MOS transistor is increasingly worsening. It could adversely affect the PN of the LO significantly, especially the flicker PN, leading to a very high 1/f3 PN corner (usually exceeding 1 MHz), which is difficult to be attenuated by a mmW PLL. On the other hand, the current literature is full of conflicts and confusing theories about the flicker noise upconversion, with a large number of ambiguities in the RF range, let alone in the mmW range. Thus, lowering the 1/f3 PN and figuring out its actual mechanisms are highly desired for 5G mmW communications.||Type of material:||Doctoral Thesis||Qualification Name:||Ph.D.||Keywords:||5G; Flicker noise; Oscillators; ISF; PXF; Class-F||Language:||en||Status of Item:||Peer reviewed|
|Appears in Collections:||Electrical and Electronic Engineering Theses|
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